Band discontinuity and effects of Si-insertion layer at (311)A GaAs/AlAs interfaceSAITO, T; HASHIMOTO, Y; IKOMA, T et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 743-745, issn 0038-1101Conference Paper

Nonresonant total transmission and the stable point in semiconductor heterostructuresYANG, R. Q.Physics letters. A. 1994, Vol 192, Num 2-4, pp 265-268, issn 0375-9601Article

Self-assembled monolayer molecular devicesWENYONG WANG; LEE, Takhee; KRETZSCHMAR, Ilona et al.International Electron Devices Meeting. 2004, pp 531-532, isbn 0-7803-8684-1, 1Vol, 2 p.Conference Paper

Average-bond-energy model for valence-band offsets : its physical basis, and applications to twenty eight heterojunctionsKE, S.-H; WANG, R.-Z; HUANG, M.-C et al.Zeitschrift für Physik. B, Condensed matter. 1997, Vol 102, Num 1, pp 61-69, issn 0722-3277Article

Low-energy yield spectroscopy determination of band offsets : application to the epitaxial Ge/Si(100) heterostructureDI GASPARE, L; CAPELLINI, G; CHUDOBA, C et al.Applied surface science. 1996, Vol 104-05, pp 595-600, issn 0169-4332Conference Paper

Characterization of the valence band offser in p-Si/Si_-xGe_x/Si by space charge spectroscopySCHMALZ, K; RÜCKER, H; YASSIEVICH, I. N et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 945-948, issn 0038-1101Conference Paper

An average-bond-energy method used for band-offset calculation for a strained heterojunctionLI, S.-P; WANG, R.-Z; ZHENG, Y.-M et al.Journal of physics. Condensed matter (Print). 2000, Vol 12, Num 35, pp 7759-7770, issn 0953-8984Article

Activation of shallow dopants in II-VI compoundsWALUKIEWICZ, W.Journal of crystal growth. 1996, Vol 159, Num 1-4, pp 244-247, issn 0022-0248Conference Paper

Band offsets and electronic structures of (ZnCdHg)(SSeTe) strained superlatticesNAKAYAMA, T.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 1077-1080, issn 0038-1101Conference Paper

Evidence of non-communitativity of band discontinuities in InP-Al(IN)As-Ga(In)As heterostructuresLUGAGNE-DELPON, E; ANDRE, J. P; VOISIN, P et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 635-639, issn 0038-1101Conference Paper

Theoretical investigation of the conduction and valence band offsets of GaAs_1-x N_x/GaAs_1-yN_y heterointerfacesGUEDDIM, A; BOUARISSA, N.Applied surface science. 2007, Vol 253, Num 17, pp 7336-7341, issn 0169-4332, 6 p.Article

Characterization of cubic phase MgZnO/Si(1 0 0) interfacesLIANG, J; WU, H. Z; LAO, Y. F et al.Applied surface science. 2005, Vol 252, Num 4, pp 1147-1152, issn 0169-4332, 6 p.Article

Band offset of quantum wells computed from charge measurementsBISWAS, Dipankar; CHAKRABARTI, Satyajit; DASGUPTA, Sudipto et al.Physica status solidi. B. Basic research. 2003, Vol 236, Num 1, pp 55-60, issn 0370-1972, 6 p.Article

Valence-band offsets of III-V alloy heterojunctionsWANG, H.-Q; ZHENG, J.-C; WANG, R.-Z et al.Surface and interface analysis. 1999, Vol 28, Num 1, pp 177-180, issn 0142-2421Conference Paper

Theoretical study of the role of natural intralayers in the band offsets of InAs/GaSb heterojunctionGONZALEZ-DIAZ, M; RODRIGUEZ-HERNANDEZ, P; MUNOZ, A et al.Applied surface science. 1998, Vol 123-24, pp 571-574, issn 0169-4332Conference Paper

Isotype heterojunctions with flat valence or conduction bandBABIC, D. I; DÖHLER, G. H; BOWERS, J. E et al.IEEE journal of quantum electronics. 1997, Vol 33, Num 12, pp 2195-2198, issn 0018-9197Article

Elementary calculation of the branch-point energy in the continuum of interface-induced gap statesMÖNCH, W.Applied surface science. 1997, Vol 117-18, pp 380-387, issn 0169-4332Conference Paper

SiO₂ valence band near the SiO₂/Si(111) interfaceNOHIRA, H; HATTORI, T.Applied surface science. 1997, Vol 117-18, pp 119-122, issn 0169-4332Conference Paper

An empirical rule for band offsets between III-V alloy compoundsICHII, A; TSOU, Y; GARMIRE, E et al.Journal of applied physics. 1993, Vol 74, Num 3, pp 2112-2113, issn 0021-8979Article

Band structures and band offsets of high k dielectrics on SiROBERTSON, J.Applied surface science. 2002, Vol 190, Num 1-4, pp 2-10, issn 0169-4332Conference Paper

Optical transitions in semiconductor superlattices with small band offset in one band and large in the otherYANG, G; RZEPNIEWSKI, E; FURDYNA, J. K et al.Semiconductor science and technology. 1999, Vol 14, Num 5, pp 454-460, issn 0268-1242Article

Exciton affinity of quantum dotsPEDERSEN, F. B; LAHELD, U. E. H; HEMMER, P. C et al.Superlattices and microstructures. 1995, Vol 17, Num 4, pp 431-438, issn 0749-6036Article

Effect of collector-base valence-band discontinuity on Kirk effect in double-heterojunction bipolar transistorsMAZHARI, B; MORKOC, H.Applied physics letters. 1991, Vol 59, Num 17, pp 2162-2164, issn 0003-6951Article

Core level photoemission studies of the interaction of pentacene with the Si(111) (7 x 7) surfaceHUGHES, G; CARTY, D; CAFOLLA, A. A et al.Surface science. 2005, Vol 582, Num 1-3, pp 90-96, issn 0039-6028, 7 p.Article

Asymmetric heterostructure design considerations for high-power lasersPATARO, Lisandra L; YUANMING DENG; DAPKUS, P. D et al.Lasers and Electro-optics Society. 2004, isbn 0-7803-8557-8, 2Vol, Vol2, 469-470Conference Paper